silicon N-channel Enhanced VDMOSFETs
Description
HM6N70/F
General Description:
HM6N70/F,the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is...
H&M Semiconductor
HM6N70 PDF File
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