FCH25N60N
Description
FCH25N60N — N-Channel SupreMOS® MOSFET
December 2013
FCH25N60N
N-Channel SupreMOS® MOSFET
600 V, 25 A, 126 mΩ Features
• RDS(on) = 108 mΩ (Typ.
) @ VGS = 10 V, ID = 12.
5 A • Ultra Low Gate Charge (Typ.
Qg = 57 nC) • Low Effective Output Capacitance (Typ.
Coss(eff.
) = 262 pF) • 100% Avalanche Tested • RoHS Compliant
Description
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs.
This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness.
SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
Application
• Solar Inverter • AC-DC Power Supply
D
G
G D S
TO-247
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy MOSFET dv/dt Peak Diode Recovery dv/dt Power Dissipation - Derate Above 25oC (TC = 25oC) (Note 3) - Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) - Continuous (TC = 25oC) FCH25N60N 600 ±30 25 16 75 861 8.
3 2.
2 100 20 216 1.
72 -55 to +150 300 Unit V V A A mJ A mJ V/ns W W/oC
o o
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
C C
Thermal Characteristics
Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
1
FCH25N60N 0.
58 40
Unit
o
C/W
©2011 Fairchild Semiconductor Corporation FCH25N60N Rev.
C1
www.
fairchildsemi.
com
Free Datasheet http://www.
datasheet-pdf.
com/
FCH25N60N — N-Channel SupreMOS® MOSFET
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