N-Channel IGBT
Description
HGTG18N120BND
Data Sheet December 2001
54A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG18N120BND is a Non-Punch Through (NPT) IGBT design.
This is a new member of the MOS gated high voltage switching IGBT family.
IGBTs combine the best features of MOSFETs and bipolar transistors.
This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49304.
Features
• 54A, 1200V, TC = 25oC • 1200V Switching SOA Capability • Typical Fall Time .
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140ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss
Packaging
JEDEC STYLE TO-247
Ordering Information
PART NUMBER HGTG18N120BND PACKAGE TO-247 BRAND 18N120BND
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.
S.
PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767
©2001 Fairchild Semiconductor Corporation
HGTG18N120BND Rev.
B
HGTG18N120BND
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified HGTG18N120BND 1200 54 26 160 ±20 ±30 100A at 1200V 390 3.
12 -55 to 150 260 8 15 UNITS V A A A V V W W/oC oC oC µs µs
Collector to Emitter Voltage .
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BVCES Collector Current Continuous At TC = 25oC .
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