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HGTD10N50F1

10A/ 400V and 500V N-Channel IGBTs

Description

HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, HGTD10N50F1S March 1997 10A, 400V and 500V N-Channel IGBTs Packages HGTD10N40F1, HGTD10N50F1 JEDEC TO-251AA EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features • 10A, 400V and 500V • VCE(ON) 2.
5V Max.
• TFALL ≤1.
4µs • Low On-State Voltage • Fast Switching Speeds • High Input Impedance Applications • Power Supplies • Motor Drives • Protective Circuits COLLECTOR (FLANGE) GATE EMITTER HGTD10N40F1S, HGTD10N50F1S JEDEC TO-252AA Description The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers.
These types can be operated directly from low power integrated circuits.
PACKAGING AVAILABILITY PART NUMBER HGTD10N40F1 HGTD10N50F1 HGTD10N40F1S HGTD10N50F1S PACKAGE TO-251AA TO-251AA TO-252AA TO-252AA BRAND G10N40 G10N50 G10N40 G10N50 Terminal Diagram N-CHANNEL ENHANCEMENT MODE C G NOTE: When ordering, use the entire part number.
Add the sufﬁx 9A to obtain the TO-252AA variant in the tape and reel, i.
e.
, HGTD10N40F19A.
E Absolute Maximum Ratings TC = +25oC, Unless Otherwise Speciﬁed HGTD10N40F1 HGTD10N40F1S 400 400 ±20 12 10 75 0.
6 -55 to +150 HGTD10N50F1 HGTD10N50F1S 500 500 ±20 12 10 75 0.
6 -55 to +150 UNITS V V V A A W W/oC oC Collector-Emitter Voltage .
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VCES Collector-Gate Voltage RGE = 1MΩ .
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VCGR Gate-Emitter Voltage .
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VGE Collector Current Continuous at TC = +25oC .
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IC25 at TC = +90oC .
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IC90 Power Dissipation Total at TC = +25oC .
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Similar Datasheet

HGTD10N50F1 10A/ 400V and 500V N-Channel IGBTs - Intersil Corporation
HGTD10N50F1S 10A/ 400V and 500V N-Channel IGBTs - Intersil Corporation

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