N-channel Enhancement-mode Power MOSFET - Advanced Power Electronics
Description
Advanced Power Electronics Corp.
AP9970GP-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement Low On-resistance Fast Switching Performance RoHS-compliant, halogen-free G S D
BV DSS RDS(ON) ID
60V 3.
2mΩ 240A
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.
The AP9970GP-HF-3 is in the TO-220 package, which is widely used for commercial and industrial applications, and is well-suited for low voltage applications such as DC/DC converters and motor drives.
The TO-220 through-hole package is often used where a small PCB footprint or an attached heatsink is required.
G
D
TO-220 (P)
S
Absolute Maximum Ratings
Symbol VDS VGS ID at TC=25°C ID at TC=100°C ID at TC=25°C IDM PD at TC=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current, (Silicon Limited) Continuous Drain Current, (Silicon Limited)
Rating 60 ±20
240 170
Units V V
A A
Continuous Drain Current, (Package Limited)
Pulsed Drain Current
1
120 960 375 -55 to 175 -55 to 175
A A W °C °C
Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maixmum Thermal Resistance, Junction-ambient Value 0.
4 62 Units °C/W °C/W
Ordering Information
AP9970GP-HF-3TB RoHS-compliant, halogen-free TO-220, shipped in tubes
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USA www.
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Advanced Power Electronics Corp.
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge
2 2
AP9970GP-HF-3
Test Condition...
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