Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Description
creat by ART
TSF20H120C
Taiwan Semiconductor
FEATURES
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
- Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition
ITO-220AB
MECHANICAL DATA
Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Terminal: Matte tin plated leads, solderable per JESD 22-B102 Polarity: As marked Mounting torque: 5 in-lbs.
max.
Weight: 1.
7 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current per device per diode SYMBOL VRRM IF(AV) IFSM IRRM EAS dV/dt VAC MIN.
Breakdown voltage ( IR =1.
0mA ) IF = 5A Instantaneous forward voltage per diode ( Note2 ) IF = 10A IF = 5A IF = 10A Instantaneous reverse current per diode at rated reverse voltage Typical thermal resistance (Note 3) Operating junction temperature range Storage temperature range Note 1: 2.
0μs Pulse width, f=1.
0KHz Note 2: Pulse test with pulse width=300μs, 1% duty cycle Note 3: Mount on heatsink size of 4in x 6in x 0.
25in Al-plate TA = 25°C TA = 125°C TA = 25°C TA = 125°C VBR VF VF IR RθJC TJ TSTG 120 TSF20H120C 120 20 10 140 0.
5 100 10000 1500 TYP.
0.
68 0.
78 0.
56 0.
63 5 4.
9 - 55 to + 150 - 55 to + 150 MAX.
0.
87 0.
69 250 15
O
UNIT V A A A mJ V/μs V V
Peak forward surge current, 8.
3 ms single half sine-wave superimposed on rated load per diode Peak repetitive reverse surge current (Note 1) Non-repetitive avalanche energy at L=60mH, per diode Voltage rate of change (Rated VR) Isolation voltage from terminal to heatsink t = 1 min
V
μA mA C/W
O O
C C
Document Number: D1307012
Version:A13
Free Datasheet http://www.
datasheet4u.
com/
TSF20H120C
Taiwan Semiconductor
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