Composite Transistor
Description
RT3K11M
Composite Transistor For high speed switching Silicon N-channel MOSFET
DESCRIPTION
RT3K11M is a composite transistor built with two INK0001AX chips in SC-88 package.
OUTLINE DRAWING
2.
1 1.
25 ① 0.
65 ② ③ ⑥ ⑤ ④ 0.
2
Unit：mm
FEATURE
・Input impedance is high, and not necessary to consider a drive electric current.
・Vth is low, and drive by low voltage is possible.
Vth=0.
6～1.
2V ・Low on Resistance.
Ron=3.
5Ω(TYP) ・High speed switching.
・Small package for easy mounting.
2.
0
APPLICATION
high speed switching , Analog switching
0.
65 0.
13 0～0.
1
⑤
Tr.
1
0.
9
0.
65
⑥
④
Tr.
2
TERMINAL CONNECTOR ①：SOURCE1 ②：GATE1 ③：DRAIN2 ④：SOURCE2 ⑤：GATE2 ⑥:DRAIN1 JEITA：SC-88
①
②
③
MAXIMUM RATING (Ta=25℃)
SYMBOL VDSS VGSS ID PD Tch Tstg PARAMETER RATING 50 UNIT V V mA mW ℃ ℃
6 5 4
MARKING
Drain-source voltage Gate-source voltage Drain current Total power dissipation（Ta=25℃） Channel temperature Range of Storage temperature
±8 100
150 ＋125 -55～＋125
.
１ .
Ｋ１
１ 2 3
ISAHAYA ELECTRONICS CORPORATION
Free Datasheet http://www.
datasheet4u.
com/
RT3K11M
Composite Transistor For high speed switching Silicon N-channel MOSFET
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Symbol V(BR)DSS IGSS IDSS Vth Parameter Test conditions Limits Min Typ Max Unit
Drain-source breakdown voltage Gate-source leak current Zero gate voltage drain current Gate threshold voltage Forward transfer admittance Static drain-source on-state resistance Input capacitance Output capacitance Switching time
I D=100μA, VGS=0V V V V
GS=±5V, VDS=0V DS
50 GS
250 3.
5 24 5 11 50
±0.
5 50 1.
2 -
V μA μA V mS Ω pF pF ns
=50V ,VGS=0V
DS= V
I D=250μA, V
DS
0.
6 -
| Yfs |
RDS(ON) Ciss Coss tON tOFF
=10V, I D=0.
1A
I D=100mA, V GS=4.
0V V DS=10V, V GS=0V,f=1MHz V V V
DS
=10V, V
GS
=0V,f=1MHz
DD=5V , I D=10mA GS=0～5V
Switching time test condition
test circuit
5V IN
OUT
5V
90%
RL 0 10μs VDD=5V D.
U.
≦1% Common source Ta=25℃ 50Ω VDD
input waveform
0V VDD
10%
10%
output waveform
VDS(ON）
ton
90%
tr toff tf
ISAHAYA ELECTRONICS...
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