40V N-Channel MOSFET
Description
AOD4184A
40V N-Channel MOSFET
General Description
The AOD4184A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is well suited for high current load applications.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.
5V) 40V 50A < 7mΩ < 9.
5mΩ
100% UIS Tested 100% Rg Tested
TO252 DPAK Top View D D G Bottom View
D
S G S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.
1mH Power Dissipation
B C C
Maximum 40 ±20 50 40 120 13 10 35 61 50 25 2.
3 1.
5 -55 to 175
Units V V A
TC=25°C TC=100°C TA=25°C TA=70°C
ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG
A A mJ W W °C
TC=25°C TC=100°C TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case
Symbol
t ≤ 10s Steady-State Steady-State
RθJA RθJC
Typ 18 44 2.
4
Max 22 55 3
Units °C/W °C/W °C/W
Rev0 : Sep 2009
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AOD4184A
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=40V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.
5V, ID=15A Forward Transconductance VDS=5V, ID=5A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 1200 VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 150 80 2 21 VGS=10V, VDS=20V, ID=20A 10 3 3 VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω IF=20A, dI/dt=100A/ µs 20 18 TJ=125°C 1.
7 120 5.
8 9.
6 7.
6 37 0.
7 1 20 1500 215 135 3.
5 27 14 5 6 6 17 30 17 29 26 38 34 1800 280 190 5 33 17 6 9 7 12 9.
5 2.
1 Min 40 1 5 ±100 2.
6 Typ Max Units V µA nA V A mΩ mΩ S V ...
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