60V N-Channel MOSFET
Description
AOT260L/AOB260L
60V N-Channel MOSFET
General Description
Product Summary
The AOT(B)260L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.
In addition, switching behavior is well controlled with a “Schottky style” soft recovery body diode.
This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =6V)
100% UIS Tested 100% Rg Tested
60V 140A < 2.
5mW < 2.
9mW
Top View
TO220 Bottom View
D D
Top View
TO-263 D2PAK
Bottom View
D D
D
G DS AOT260L
S DG
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current G
TC=25°C TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.
1mH C
IDSM
IAS, IAR EAS, EAR
TC=25°C Power Dissipation B TC=100°C
PD
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
S G
AOB260L
Maximum 60 ±20 140 110 500 20 16 128 819 330 165 1.
9 1.
2
-55 to 175
G S
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s Steady-State Steady-State
Symbol RqJA RqJC
Typ 12 54 0.
35
Max 15 65 0.
45
G S
Units V V
A
A A mJ W
W °C
Units °C/W °C/W °C/W
Rev.
2.
0 : November 2013
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aosmd.
com
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS VGS(th) ID(ON)
Gate-Body leakage current Gate Threshold Voltage On state drain current
ID=250mA, VGS=0V VDS=60V, VGS=0V
VDS=0V, VGS= ±20V VDS=VGS ID=250mA VGS=10V, VDS=5V ...
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