60V N-Channel MOSFET
Description
AOT2608L/AOB2608L
60V N-Channel MOSFET
General Description
The AOT2608L/AOB2608L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 60V 72A < 8.
0mΩ (< 7.
6mΩ∗)
100% UIS Tested 100% Rg Tested
TO220 Top View Bottom View D D D Top View
TO-263 D2PAK Bottom View
D
D
G G D S S D G G S S G S
Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.
1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case * Surface mount package TO263
C
Maximum 60 ±20 72 54 180 11 8.
5 50 125 100 50 2.
1 1.
3 -55 to 175
Units V V A
VGS TC=25° C C TC=100° TA=25° C TA=70° C ID IDM IDSM IAS EAS PD PDSM TJ, TSTG
A A mJ W W ° C
Symbol
t ≤ 10s Steady-State Steady-State
RθJA RθJC
Typ 12 48 1.
2
Max 15 60 1.
5
Units ° C/W ° C/W ° C/W
Rev 1 : Mar.
2012
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Free Datasheet http://www.
datasheet4u.
com/
AOT2608L/AOB2608L
Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=60V, VGS=0V C TJ=55° VDS=0V, VGS=±20V VDS=VGS，ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TO220 VGS=10V, ID=20A TO263 VDS=5V, ID=20A IS=1A,VGS=0V TJ=125° C 2.
6 180 6.
6 11.
4 6.
3 75 0.
72 1 72 2995 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.
3 270 10.
5 0.
6 38.
5 VG...
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