60V N-Channel MOSFET
Description
AOT2606L/AOB2606L/AOTF2606L
60V N-Channel MOSFET
General Description
The AOT2606L & AOB2606L & AOTF2606L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 60V 72A < 6.
5mΩ (< 6.
2mΩ∗)
100% UIS Tested 100% Rg Tested
Top View TO-220 TO-220F D TO-263 D2PAK D
G D S AOTF2606L G D S AOB2606L G S S
AOT2606L
G
Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol AOT2606L/AOB2606L VDS Drain-Source Voltage 60 Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.
1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case * Surface mount package TO263
C
AOTF2606L
Units V V
VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS EAS PD PDSM TJ, TSTG 115 57.
5 72 56
±20 54 38 260 13 10 60 180 36.
5 18 2.
1 1.
3 -55 to 175
A
A A mJ W W ° C
Symbol
t ≤ 10s Steady-State Steady-State
RθJA RθJC
AOT2606L/AOB2606L 15 60 1.
3
AOTF2606L 15 60 4.
1
Units ° C/W ° C/W ° C/W
Rev 1 : Mar.
2012
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Page 1 of 7
Free Datasheet http://www.
datasheet4u.
com/
AOT2606L/AOB2606L/AOTF2606L
Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=60V, VGS=0V C TJ=55° VDS=0V, VGS=±20V VDS=VGS，ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TO220/TO220F VGS=10V, ID=20A TO263 VDS=5V, ID=20A IS=1A,VGS=0V TJ=125° C 2.
5 260 5.
4 8.
5 5.
...
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