Power Transistor
Description
AOT15S65/AOB15S65/AOTF15S65
650V 15A α MOS
TM
Power Transistor
General Description
The AOT15S65 & AOB15S65 & AOTF15S65 have been TM fabricated using the advanced αMOS high voltage process that is designed to deliver high levels of performance and robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
Product Summary
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 750V 60A 0.
29Ω 17.
2nC 3.
6µJ
100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT15S65L & AOB15S65L & AOTF15S65L
Top View TO-220 TO-220F TO-263 D2PAK D D
G AOT15S65
D
S G AOTF15S65 D
S G AOB15S65
G S S
Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter AOT15S65/AOB15S65 Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G TC=25° C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt H Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D
C
AOTF15S65 650 ±30 15* 10* 60 2.
4 86 173
AOTF15S65L
Units V V
VGS TC=25° C TC=100° C ID IDM IAR EAR EAS PD dv/dt TJ, TSTG TL Symbol RθJA AOT15S65/AOB15S65 65 0.
5 0.
6 208 1.
7 15 10
15* 10* A A mJ mJ 34 0.
3 W W/ oC V/ns ° C ° C AOTF15S65L 65 -3.
7 Units ° C/W ° C/W ° C/W
50 0.
4 100 20 -55 to 150 300 AOTF15S65 65 -2.
5
RθCS Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.
Rev1: Mar 2012
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Free Datasheet http://www.
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AOT15S65/AOB15S65/AOTF15S65
Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) VSD IS ISM Drain-S...
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