MOSFET
Description
SMD Type
MOS Field Effect Transistor 2SJ600
Features
Low on-resistance RDS(on)1 = 50 m RDS(on)2 = 79m MAX. (VGS =-10 V, ID = -13 A) MAX. (VGS = -4.0 V, ID =-13 A)
+0.15 5.55-0.15
+0.15 6.50-0.15 +0.2 5.30-0.2
IC MOSFET
TO-252
+0.15 1.50-0.15
+0.1 2.30-0.1 +0.8 0.50-0.7
Unit: mm
+0.2 9.70-0.2
+0.1 0.80-0.1
+0.15 0.50-0.15
Built-in gate protection diode...
Similar Datasheet