NPN EPITAXIAL PLANAR TRANSISTOR
Description
HI-SINCERITY
MICROELECTRONICS CORP.
HJ669A
NPN EPITAXIAL PLANAR TRANSISTOR
Spec.
No.
: HE6830 Issued Date : 1994.
01.
25 Revised Date : 2008.
04.
09 Page No.
: 1/3
Description
The HJ669A is designed for low frequency power amplifier.
Absolute Maximum Ratings (TA=25°C)
TO-252
• Maximum Temperatures Storage Temperature .
.
-55 ~ +150 °C Junction Temperature .
+150 °C
• Maximum Power Dissipation Total Power Dissipation (TC=25°C) .
.
.
1 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage .
.
.
18...
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