N-channel MOSFET
Description
SAMWIN
SW19N10
N-channel MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 0.1Ω)@VGS=10V ■ Gate Charge (Typ 100nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
TO-220
TO-252
BVDSS : 100V ID : 17A RDS(ON) : 0.1 ohm
1 1 2 3
2 3 2
1. Gate 2. Drain 3. Source
1
General Description This N-channel enhancement mode field-effect power transistor using ...
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