N-channel MOSFET
Description
SW10N65
N-channel Enhanced mode TO-220F/TO-220 MOSFET
Features
TO- 220F
TO-220
High ruggedness Low RDS(ON) (Typ 1Ω)@VGS=10V Low Gate Charge (Typ 40nC) Improved dv/dt Capability 100% Avalanche Tested Application: Charge,LED,PC Power
12 3
12 3
1.
Gate 2.
Drain 3.
Source
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
BVDSS : 650V ID : 10A RDS(ON) : 1Ω
2
1 3
Order Codes Item 1 2
Sales Type SW P 10N65 SW F 10N65
Marking SW10N65 SW10N65
Package TO-220 TO-220F
Packaging TUBE TUBE
Absolute maximum ratings
Symbol
Parameter
VDSS
ID
IDM VGS EAS EAR dv/dt
PD
TSTG, TJ
TL
Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC=100oC) Drain current pulsed Gate to source voltage Single pulsed avalanche energy
(note 1) (note 2)
Repetitive avalanche energy
(note 1)
Peak diode recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC) Derating factor above 25oC
Operating junction temperature & storage temperature
Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds.
Value
TO-220
TO-220F
650
10.
0*
5.
7*
36 ±30
212
15
5
156 38
1.
25 0.
3
-55 ~ + 150
300
Unit
V A A A V mJ mJ V/ns W W/oC oC
oC
*.
Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
Rthjc Thermal resistance, Junction to case Rthja Thermal resistance, Junction to ambient
Value
TO-220 0.
8
TO-220F 3.
3
55
Unit
oC/W oC/W
Copyright@ SEMIPOWER Electronic Technology Co.
, Ltd.
All rights reserved.
Oct.
2015.
Rev.
4.
0
1/6
SW10N65
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Off characteristics
BVDSS Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS Breakdown voltage temperature / Δ...
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