MOS Field Effect Transistor - Kexin
Description
SMD Type
IC MOSFET
MOS Field Effect Transistor 2SK3641
TO-252
Unit: mm
+0.
1 2.
30-0.
1 +0.
8 0.
50-0.
7 +0.
15 6.
50-0.
15 +0.
2 5.
30-0.
2
Features
Low on-state resistance RDS(on)1 =14 m RDS(on)2 =25 m MAX.
(VGS = 10 V, ID = 18A)
+0.
2 9.
70-0.
2
+0.
15 1.
50-0.
15
+0.
1 0.
80-0.
1
2.
3
+0.
15 4.
60-0.
15
+0.
1 0.
60-0.
1
+0.
28 1.
50-0.
1
+0.
25 2.
65-0.
1
Low Ciss: Ciss = 930 pF TYP.
+0.
15 0.
50-0.
15
MAX.
(VGS = 4.
5 V, ID = 15 A)
0.
127 max
+0.
15 5.
55-0.
15
1 Gate 2 Drain 3 Source
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 30 20 36 140 29 1.
0 150 -55 to +150 Unit V V A A W
Electrical Characteristics Ta = 25
Parameter Drain cut-off current Gate leakage current Gate cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Note Reverse Recovery Time Reverse Recovery Charge Symbol IDSS IGSS VGS(off) Yfs RDS(on)1 RDS(on)2 Ciss Coss Crss ton tr toff tf QG QGS QGD VF(S-D) trr Qrr VDD = 24V VGS = 10 V ID =36A IF = 36 A, VGS = 0 V IF = 36 A, VGS = 0 V di/dt = 100 A/ ìs ID=18A,VGS(on)=15V,RG=10 ,VDD=10V VDS=10V,VGS=0,f=1MHZ Testconditons VDS=30V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=18A VGS=10V,ID=18A VGS=4.
5V,ID=15A 1.
5 5.
5 11 11 17 930 250 160 9.
4 8.
6 34 11 22 3.
6 7.
4 1.
0 24 15 14 25 Min Typ Max 10 10 2.
5 Unit A A V S m m pF pF pF ns ns ns ns nC nC nC V ns nC
3.
80
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