N-CHANNEL SILICON POWER MOSFET
Description
2SK3688-01L,S,SJ
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOSFET
200509
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
P4
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Ratings 600 600 Continuous drain current ±16 Pulsed drain current ±64 Gate-source voltage ±30 Repetitive or non-repetitive 16 Maximum avalanche energy 242.
7 Maximum drain-source dV/dt 20 Peak diode recovery dV/dt 5 1.
67 Max.
power dissipation 270 Operating and storage Tch +150 temperature range Tstg -55 to +150 Isolation voltage VISO 2 *1 L=1.
74mH, Vcc=60V, See to Avalanche Energy Graph *2 IF< = BVDSS, Tch < = 150°C = -ID, -di/dt=50A/μs, Vcc < Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Item Drain-source voltage Symbol V DS VDSX ID ID(puls] VGS IAR EAS dV DS /dt dV/dt PD Unit V V A A V A mJ kV/μ s kV/μ s W Remarks VGS=-30V
Equivalent circuit schematic
Tch < =150°C *1 VDS < = 600V *2 Ta=25°C Tc=25°C
Gate(G) Source(S) Drain(D)
°C °C kVrms t=60sec, f=60Hz
Electrical characteristics (Tc =25°C unless otherwise specified)
Test Conditions ID= 250μA VGS=0V ID= 250μA VDS=VGS VDS=600V VGS=0V Tch=25°C Tch=125°C VDS=480V VGS=0V VGS=±30V VDS=0V ID=8A VGS=10V ID=8A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=8A VGS=10V RGS=10 Ω VCC =300V ID=16A VGS=10V L=1.
74mH Tch=25°C IF=16A VGS=0V Tch=25°C IF...
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