N-Channel MOSFET
Description
AON6918
25V Dual Asymmetric N-Channel MOSFET
General Description
The AON6918 is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization.
It includes two specialized MOSFETs in a dual Power DFN5x6A package.
The Q1 "High Side" MOSFET is designed to minimize switching losses.
The Q2 "Low Side" MOSFET is designed for low RDS(ON) to reduce conduction losses.
The AON6918 is well suited for use in compact DC/DC converter applications.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.
5V) 100% UIS Tested 100% Rg Tested Q1 25V 60A <5.
2mΩ <7.
8mΩ Q2 25V 85A <1.
8mΩ <2.
7mΩ
DFN5X6A Top View
S2 S2 S2
Bottom View
G2 (S1/D2) D1 D1 D1 D1 G1
PIN1
Top View
Bottom View
Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current C Continuous Drain Current Avalanche Current
C C
Max Q1 25 ±20 60 38 200 15 12 40 80 31 12.
5 2 1.
3 -55 to 150
Max Q2
Units V V
VGS TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG TC=25° C
85 66 490 26.
5 21 78 304 104 41.
5 2.
2 1.
4 A A mJ W W ° C A
Avalanche Energy L=0.
1mH Power Dissipation
B
TC=100° C TA=25° C TA=70° C
Power Dissipation A
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case
Symbol
t ≤ 10s Steady-State Steady-State
RθJA RθJC
Typ Q1 25 50 3.
1
Typ Q2 20 45 0.
9
Max Q1 Max Q2 30 25 60 55 4 1.
2
Units ° C/W ° C/W ° C/W
Rev0 : Aug 2011
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AON6918
C unless otherwise noted) Q1 Electrical Characteristics (TJ=25° Symbol Parameter Conditions ID=250µA, VGS=0V VDS=25V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.
5V, ID=20A Forward Transconducta...
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