Silicon NPN Transistor
Description
SMD Type
Silicon NPN Epitaxial Planar 2SC3929
Features
Low noise voltage NV.
High forward current transfer ratio hFE.
Transistors IC
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 35 35 5 50 100 150 150 -55 to +150 Unit V V V mA mA mW
Electrical Characteristics Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Base-emitter voltage Collector-base cutoff current Collector-emitter cutoff current Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Noise voltage Symbol VCBO VCEO VEBO VBE ICBO ICEO hFE Testconditons IC = 10 ìA, IE = 0 IC = 2 mA, IB = 0 IE = 10 ìA, IC = 0 VCE = 1 V, IC = 100 mA VCB = 10 V, IE = 0 VCE = 10 V, IB = 0 VCE = 5 V, IC = 2 mA 180 Min 35 35 5 0.
7 1.
0 0.
1 1 700 0.
6 100 150 V MHz mV Typ Max Unit V V V V ìA ìA
VCE(sat) IC = 100 mA, IB = 10 mA fT NV VCB = 5 V, IE = ?2 mA, f = 200 MHz VCE = 10 V, IC = 1 mA, GV = 80 dB, Rg = 100 kÙ, Function = FLAT
hFE Classification
Marking hFE SR 180 360 SS 260 520 ST 360 700
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