SILICON POWER TRANSISTOR
Description
DATA SHEET
SILICON POWER TRANSISTOR
2SC3518-Z
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits.
FEATURES
• High DC Current Gain hFE = 100 to 400 • Low VCE(sat): VCE(sat) = 0.
09 V TYP.
• Complement to 2SA1385-Z
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
60
V
Emitter to Base Voltage
VEBO
7
V
Collector Current (DC)
IC(DC)
5
A
Collector Current (pulse) Note 1
IC(pulse)
7
A
Total Power Dissipation (TA = 25°C) Note 2 PT
2.
0
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−55 to +150 °C
PACKAGE DRAWING (Unit: mm)
6.
5 ±0.
2 5.
0 ±0.
2 4.
4 ±0.
2
4
Note
1.
5
+0.
2 −0.
1
2.
3 ±0.
2 0.
5 ±0.
1 Note
1.
0 ±0.
5 0.
4 MIN.
0.
5 TYP.
2.
5 ±0.
5
5.
6 ±0.
3 9.
5 ±0.
5
5.
5 ±0.
2
123
2.
3 ±0.
3
0.
5 ±0.
1 2.
3 ±0.
3
0.
5 ±0.
1 0.
15 ±0.
15
TO-252 (MP-3Z)
1.
Base 2.
Collector 3.
Emitter 4.
Collector Fin
Note The depth of notch at the top of the fin is from 0 to 0.
2 mm.
Notes 1.
PW ≤ 10 ms, Duty Cycle ≤ 50% 2.
When mounted on ceramic substrate of 7.
5 cm2 × 0.
7 mm
The information in this document is subject to change without notice.
Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country.
Please check with an NEC Electronics sales representative for availability and additional information.
Document No.
D18263EJ3V0DS00 (3rd edition)
(Previous No.
TC-1662A)
Date Published July 2006 NS CP(K) Printed in Japan
The mark shows major revised points.
The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
1985, 2006
2SC3518-Z
2
Data Sheet D18263EJ3V0DS
2SC3518-Z
3
Data Sheet D18263EJ3V0DS
2SC3518-Z
• The information in this document is current as of July, 2006.
The information is subject to change without notice.
For actual design-in, ref...
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