Silicon NPN Power Transistors
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High voltage switching and amplifier applications. ·Color TV horizontal driver applications. ·Color TV chroma output application...
Inchange Semiconductor
2SC3619 PDF File
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