Power MOSFET
Description
VDS RDS(on) max
(@VGS = 4.
5V) (@VGS = 2.
5V)
Qg (typical) RG (typical)
ID
(@Tmb = 25°C)
20
0.
99
1.
50 155 1.
3
h100
V
mΩ
nC Ω A
Applications • Charge and discharge switch for battery application • Load switch for 12V (typical) bus • Hot-Swap Switch
Features Low RDSon (≤ 0.
99mΩ) Low Thermal Resistance to PCB (≤ 0.
8°C/W) Low Profile (≤ 0.
9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free
IRFH6200TRPbF
HEXFET® Power MOSFET
PQFN 5X6 mm
results in ⇒
Benefits Lower Conduction Losses Enable better thermal dissipation Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier
Base Part Number IRFH6200PbF
Package Type
PQFN 5mm x 6mm PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Orderable part number
IRFH6200TRPbF IRFH6200TR2PbF
Note EOL Notice #259
Absolute Maximum Ratings
VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ Tmb = 25°C ID @ Tmb = 100°C IDM PD @TA = 25°C PD @Tmb = 25°C
TJ TSTG
Parameter Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 4.
5V Continuous Drain Current, VGS @ 4.
5V Continuous Drain Current, VGS @ 4.
5V
cContinuous Drain Current, VGS @ 4.
5V
Pulsed Drain Current
gPower Dissipation gPower Dissipation gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
20 ±12 49
40
100h 100h
400
3.
6 156
0.
029 -55 to + 150
Units V
A
W W/°C
°C
Notes through are on page 9 1 www.
irf.
com © 2015 International Rectifier
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May 19, 2015
IRFH6200TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
ΔΒVDSS/ΔTJ
Breakdown Voltage Temp.
Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(t h) ΔV GS (t h) IDSS
Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
gfs Forward Transconducta...
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