MOS FET
Description
Preliminary Datasheet
RJK6002DPH-E0
600V - 2A - MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching R07DS1047EJ0100 Rev.1.00 Mar 21, 2013
Outline
RENESAS Package code: PRSS0004ZJ-B (Package name: TO-251)
4 1. 2. 3. 4. Gate Drain Source Drain
D...
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