MOS FIELD EFFECT TRANSISTOR
Description
Preliminary Data Sheet
μ PA2811T1L
MOS FIELD EFFECT TRANSISTOR
Description
R07DS0191EJ0100 Rev.
1.
00 Jan 11, 2011
The μ PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.
Features
• VDSS −30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 15 mΩ MAX.
(VGS = −10 V, ID = −19 A) • 4.
5 V Gate-drive available • Built-in gate protection diode • Small & thin type surface mount package with heat spreader (8-pin HVSON) • Halogen free and RoHS compliant
Ordering Information
Part No.
μ PA2811T1L-E1-AY ∗1 μ PA2811T1L-E2-AY ∗1 LEAD PLATING Pure Sn PACKING Tape 3000 p/reel Package 8-pin HVSON (3333) typ.
0.
028 g
Note: ∗1.
Pb-free (This product does not contain Pb in external electrode.
)
Absolute Maximum Ratings (TA = 25°C)
Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation ∗2 Total Power Dissipation (PW = 10 sec) ∗2 Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current ∗3 Single Avalanche Energy ∗3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 PT3 Tch Tstg IAS EAS Ratings −30 m25 m19 m76 1.
5 3.
8 52 150 −55 to +150 −19 36 Unit V V A A W W W °C °C A mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ∗2 Channel to Case (Drain) Thermal Resistance Rth(ch-A) Rth(ch-C) 83.
3 2.
4 °C/W °C/W
Notes: ∗1.
PW ≤ 10 μs, Duty Cycle ≤ 1% ∗ 2.
Mounted on a glass epoxy board of 25.
4 mm x 25.
4 mm x 0.
8 mmt ∗ 3.
Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, VGS = −20 → 0 V, L = 100 μH
R07DS0191EJ0100 Rev.
1.
00 Jan 11, 2011
Page 1 of 6
Free Datasheet http://www.
datasheet4u.
com/
Chapter Title
Electrical Characteristics (TA = 25°C)
Item Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance ∗1 Drain to Source On-state 1 Resistance ∗ Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on D...
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