N-channel MOSFET
Description
Data Sheet
μPA2766T1A
N-channel MOSFET 30 V , 130 A , 0.
88 mΩ
Description
The μ PA2766T1A is N-channel MOS Field Effect Transistor designed for high current switching application.
R07DS0883EJ0102 Rev.
1.
02 Nov 28, 2012
Features
• VDSS = 30 V (TA = 25°C) • Low on-state resistance ⎯ RDS(on) = 0.
88 mΩ MAX.
(VGS = 10 V, ID = 46 A) ⎯ RDS(on) = 1.
82 mΩ MAX.
(VGS = 4.
5 V, ID = 39 A) • 4.
5 V Gate-drive available • Thin type surface mount package with heat spreader • Halogen free
8-pin HVSON(6051)
Ordering Information
Part No.
LEAD PLATING Pure Sn PACKING Tape 3000 p/reel Package 8-pin HVSON(6051) 0.
1 g TYP.
μ PA2766T1A-E2-AY∗1
Note: ∗1.
Pb-free (This product does not contain Pb in external electrode.
)
Absolute Maximum Ratings (TA = 25°C)
Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation ∗2 Total Power Dissipation (PW = 10 sec) ∗ Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current ∗3 Single Avalanche Energy ∗3
2
Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 PT3 Tch Tstg IAS EAS
Ratings 30 ±20 ±130 ±312 1.
5 4.
6 83 150 −55 to +150 55 303
Unit V V A A W W W °C °C A mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ∗2 Channel to Case(Drain) Thermal Resistance Rth(ch-A) Rth(ch-C) 83.
3 1.
5 °C/W °C/W
Notes: ∗1.
PW ≤ 10 μs, Duty Cycle ≤ 1% ∗ 2.
Mounted on a glass epoxy board of 25.
4 mm x 25.
4 mm x 0.
8 mmt ∗ 3.
Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
R07DS0883EJ0102 Rev.
1.
02 Nov 28, 2012
Page 1 of 6
Free Datasheet http://www.
datasheet4u.
com/
μPA2766T1A
Electrical Characteristics (TA = 25°C)
Item Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance ∗1 Drain to Source On-state 1 Resistance ∗ Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Ga...
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