Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Description
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vishay.
com
V40D100C
Vishay General Semiconductor
Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.
40 V at IF = 5 A
eSMP® Series SMPD (TO-263AC)
K
1
2 Top View
Bottom View
Anode 1 Anode 2
K Cathode
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
FEATURES
• Trench MOS Schottky technology
Available
• Very low profile - typical height of 1.
7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, inductrial, and automotive application.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 20 A
VRRM
100 V
IFSM
250 A
VF at IF = 20 A (TA = 125 °C) TJ max.
0.
63 V 150 °C
Package
SMPD (TO-263AC)
Circuit configuration
Common cathode
MECHANICAL DATA
Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified
Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: as marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig.
1)
per device per diode
VRRM IF(AV)
Peak forward surge current 10 ms single half sine-wave superimposed on rated load
IFSM
Voltage rate of change (rated VR) Operating junction and storage temperature range
dV/dt TJ, TSTG
V40D100C 100 40 20
250
10 000 -40 to +150
UNIT V
A
A V/μs °C
Revision: 27-Mar-2020
1
Document Number: 87950
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