P-Channel Enhancement Mode MOSFET
Description
WPM3401
WPM3401
P-Channel Enhancement Mode MOSFET
http://www.
jestek.
com.
cn
Description
The WPM3401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching.
Features
z z z z z -30V/-4.
3A,RDS(ON)< 65m@VGS=- 10V -30V/-3.
4A,RDS(ON)< 90m@VGS=-4.
5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT23 package design
P−Channel MOSFET
G
1 3 D
S
2
Top View
Application
z z z z z Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch
G 1 Gate Drain 3
WP1U
2 Source
U = Date Code WP1 = Specific Device Code
Order information
Part Number WPM3401-3/TR Package SOT23 Shipping
3000 Tape&Reel
http://www.
jestek.
com.
cn
Page 1
Free Datasheet http://www.
datasheet4u.
com/
Parameter
WPM3401
Absolute Maximum Ratings (TA=25 к! unless otherwise specified)
Parameter Parameter
VDS VGS ID IDM PD TJ Tstg RșJA
Symbol l
Drain-Source voltage Gate-Source Voltage Continuous Drain Steady-State TA=25ć Current Steady-State TA=70ć Pulse Drain Current Power Dissipation TA=25ć TA=70ć Operating Junction Temperature Range Storage Temperature Range Thermal Resistance-Junction to Ambient
Value
-30 ±20 -4.
3 -3.
4 -20 2.
8 1.
8 -55~150 70
Unit
V V A A W ć ć/W
Electrical Characteristics
(TA=25к Unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Tu...
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