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AO8804

Dual N-Channel FET

Description

AO8804 General Description Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor The AO8804 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-direc...

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AO8804 PDF File

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