PNP/NPN Epitaxial Planar Silicon Transistors
Description
Ordering number:EN1412C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1370/2SC3467
High-Definition CRT Display, Video Output Applications
Use
· Color TV chroma output and high breakdown voltage driver.
Package Dimensions
unit:mm 2006A
[2SA1370/2SC3467]
Features
· High breakdown voltage : VCEO≥200V.
· Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.
2pF (NPN), 1.
7pF (PNP).
· Adoption of FBET process.
( ) : 2SA1370
EIAJ : SC-51 SANYO : MP
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
B : Base C : Collector E : Emitter
Ratings (–)200 (–)200 (–)5 (–)100 (–)200 1.
0 150 –55 to +150
Unit V V V mA mA W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Votage Output Capacitance Reverse Transfer Capacitance Symbol ICBO IEBO hFE fT VCE(sat) VBE(sat) VCB=(–)150, IE=0 VEB=(–)4V, IC=0 VCE=(–)10V, IC=10mA VCE=(–)30V, IC=(–)10mA IC=(–)20mA, IB=(–)2mA IC=(–)20mA, IB=(–)2mA (–)200 (–)200 (–)5 1.
7 (2.
6) Cre VCB=(–)30V, f=1MHz 1.
2 (1.
7) 40* 150 (–)0.
6 (–)1.
0 Conditions Ratings min typ max (–)0.
1 (–)0.
1 320* MHz V V V V V pF pF pF pF Unit µA µA
V(BR)CBO IC=(–)10µA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ V(BR)EBO IE=(–)10µA, IC=0 Cob VCB=(–)30V, f=1MHz
* : The 2SA1370/2SC3467 are classified by 10mA hFE as follows :
40 C 80 60 D 120 100 E 200 160 F 320
SANYO Electric Co.
,Ltd.
Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg.
, 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
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