Silicon PNP Transistor
Description
Bipolar Transistors Silicon PNP Epitaxial Type
2SA1162
1.
Applications
• Low-Frequency Amplifiers • Audio Frequency General Purpose Amplifier Applications
2.
Features
(1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage: VCEO = -50 V (3) High collector current: IC = -150 mA (max) (4) High hFE: hFE = 70 to 400 (5) Excellent hFE linearity: hFE (IC = -0.
1 mA)/hFE (IC = -2 mA) = 0.
95 (typ.
) (6) Low noise: NF = 1 dB (typ.
), 10 dB (max) (7) Complementary to 2SC2712
3.
Packaging
2SA1162
S-Mini
1: Base 2: Emitter 3: Collector
©2021
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
1982-12
2021-10-06 Rev.
3.
0
4.
Orderable part number
2SA1162
Orderable part number
AEC-Q101
Note
2SA1162-O
2SA1162-O,LF
�
General Use
2SA1162-O,LXGF
YES
(Note 1) Unintended Use
2SA1162-Y
2SA1162-O,LXHF 2SA1162-Y,LF
YES �
Automotive Use General Use
2SA1162-Y,LXGF
YES
(Note 1) Unintended Use
2SA1162-GR
2SA1162-Y,LXHF 2SA1162-GR,LF
YES �
Automotive Use General Use
2SA1162-GR,LXGF
YES
(Note 1) Unintended Use
2SA1162-GR,LXHF
YES
Automotive Use
Note 1: For more information, please contact our sales or use the inquiry form on our website.
(Note 1) (Note 1) (Note 1)
5.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Base current Collector power dissipation
Junction temperature
Storage temperature
(Note 2), (Note 4) (Note 3) (Note 2) (Note 3) (Note 2) (Note 3)
VCBO VCEO VEBO
IC IB PC
Tj
Tstg
-50
V
-50
V
-5
V
-150
mA
-30
mA
200
mW
150
150
�
125
-55 to 150
�
-55 to 125
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating te...
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