IGBT
Description
NGTB40N120LWG IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on−state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated into ...
Similar Datasheet
- NGTB40N120L3WG IGBT - ON Semiconductor
- NGTB40N120LWG IGBT - ON Semiconductor
