Power MOSFET
Description
Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l l
IRF1010NSPbF IRF1010NLPbF
HEXFET® Power MOSFET
D
PD - 95103
VDSS = 55V RDS(on) = 11mΩ
G S
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
It provides the highest power capability and the lowest possible onresistance in any existing surface mount package.
The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.
0W in a typical surface mount application.
The through-hole version (IRF1010NL) is available for lowprofile applications.
Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
ID = 85A
IRF1010NSPbF IRF1010NLPbF
http://www.
DataSheet4U.
net/
D 2 Pak
TO-262
Parameter
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
85
60 290 180 1.
2 ± 20 43 18 3.
6 -55 to + 175 300 (1.
6mm from case ) 10 lbf•in (1.
1N•m)
Units
A W W/°C V A mJ V/ns °C
Thermal Resistance
Parameter
RθJC RθJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
––– –––
Max.
0.
85 40
Units
°C/W
www.
irf.
com
1
03/11/04
datasheet pdf - htt...
Similar Datasheet
