SILICON DARLINGTON POWER TRANSISTORS
Description
SEMICONDUCTORS
BDT65-A-B-C SILICON DARLINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe.
They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.
PNP complements are BDT64-A-B-C Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C
Value
60 80 100 120 60 80 100 120 5
Unit
VCBO
Collector-Base Voltage
www.
DataSheet.
net/
V
VCEO
Collector-Emitter Voltage
V
VEBO
Emitter-Base Voltage
V
IC
Collector Current
12
A
ICM
Collector Peak Current
20
A
26/09/2012
COMSET SEMICONDUCTORS
1|5
Datasheet pdf - http://www.
DataSheet4U.
co.
kr/
SEMICONDUCTORS
BDT65-A-B-C
ABSOLUTE MAXIMUM RATINGS Symbol Ratings
BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C
Value
Unit
IB
Base Current
500
mA
PT
Power Dissipation
@ Tmb < 25°
125
Watts
TJ
Junction Temperature
150 °C -65 to +150
Ts
Storage Temperature range
www.
DataSheet.
net/
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS Symbol
Rthj-c
Ratings
Thermal Resistance, Junction to Case
Value
1
Unit
°C/W
26/09/2012
COMSET SEMICONDUCTORS
2|5
Datasheet pdf - http://www.
DataSheet4U.
co.
kr/
SEMICONDUCTORS
BDT65-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ
Max
Unit
IE= 0 VCB = VCBOmax ICBO Collector Cutoff Current IE= 0 VCB = 1/2 VCBOmax TJ= 150 °C IE= 0 VCE = 1/2 VCEOmax
ICEO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VEB= 5 V IC= 0
www.
DataSheet.
net/
VCEO
Collector-Emitter Breakdown Voltage
IC= 30 mA IB= 0
IC= 5 A IB= 20 mA VCE(SAT) Collector-Emitter saturation Voltage (*) IC= 10 A IB= 100 mA
BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BD...
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