PNP Transistor
Description
2N2907AHR
Datasheet
Rad-hard 60 V, 0.
6 A PNP transistor
3
1 2
LCC-3
3 4
1 2
UB
Pin 4 in UB is connected to the metallic lid.
C (3)
(2) B
E (1)
DS10460
Product status link 2N2907AHR
Features
VCBO
IC(max.
)
60 V
ESCC
• Hermetic packages • ESCC qualified • 100 krad
0.
5 A
HFE at 10 V, 150 mA > 100
Tj(max.
) 200 °C
Description
The 2N2907AHR is a bipolar transistor able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID).
Qualified as per ESCC 5202/001 specification and available in LCC-3 and UB hermetic packages, it is specifically recommended for space and harsh environment applications and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror configuration.
In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.
Product summary
Part-number
2N2907ARUBx 2N2907AUBx SOC2907ARHRx SOC2907AHRx
Product summary
Qualification system
Agency specification
ESCC Flight
5202/001
ESCC Flight
5202/001
ESCC Flight
5202/001
ESCC Flight
5202/001
Note:
See Table 7 for ordering information.
Package
UB UB LCC-3 LCC-3
Radiation level
100 krad -
100 krad -
DS6095 - Rev 14 - February 2022 For further information contact your local STMicroelectronics sales office.
www.
st.
com
1
Note:
Electrical ratings
For PNP transistor voltage and current polarity is reversed.
Table 1.
Absolute maximum ratings
Symbol VCBO VCEO VEBO IC
Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current
Parameter
PTOT
Total dissipation at Tamb ≤ 25 °C
LCC-3 and UB LCC-3 and UB(1)
TOP
Operating temperature range
TJ
Max.
operating junction temperature
1.
When mounted on a 15 x 15 x 0.
6 mm ceramic substrate.
Table 2.
Thermal data
Symbol
Parameter
RthJA
Thermal resistance junction-ambient (max.
)
1.
When mounted on a 15 x 15 x 0.
6 mm ceramic ...
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