Hi-Rel NPN bipolar transistor
Description
2N2219AHR
Hi-Rel NPN bipolar transistor 40 V, 0.
8 A
Datasheet — production data
Features
BVCEO IC (max) HFE at 10 V - 150 m Operating temperature range
■ ■ ■ ■ ■
40 V 0.
8 A > 100 - 65 °C to + 200 °C
Hi-Rel NPN bipolar transistor Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiation level: lot specific total dose contact marketing for specified level Figure 1.
Internal schematic diagram
TO-39
Description
The 2N2219AHR is a silicon planar epitaxial NPN transistor in a TO-39 package.
It is specifically designed for aerospace Hi-Rel applications, and ESCC qualified in accordance with the 5201-003 specification.
In case of discrepancies between this datasheet and ESCC detailed specification, the latter prevails.
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Table 1.
Device summary
Package TO-39 TO-39 Lead finish Gold Solder Dip Gold Marking 520100301 520100302 2N2219AT1 Type ESCC Flight Engineering model EPPL Yes Packaging Strip pack Strip pack
Order codes 2N2219AHR 2N2219AT1
October 2012
This is information on a product in full production.
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Electrical ratings
2N2219AHR
1
Electrical ratings
Table 2.
Symbol VCBO VCEO VEBO IC PTOT TSTG TJ
Absolute maximum ratings
Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Total dissipation at Tamb ≤ 25°C Total dissipation at Tc ≤ 25°C Storage temperature Max.
operating junction temperature Value 75 40 6 0.
8 0.
8 3 -65 to 200 200 Unit V V V A W W °C °C
Table 3.
Symbol RthJC RthJA
Thermal data
Parameter Thermal resistance junction-case __ Thermal resistance junction-ambient __ max max Value 58 218 Unit °C/W °C/W
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Doc ID 15294 Rev 3
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2N2219AHR
Electrical characteristics
2
Electrical characteristics
Tcase = 25 °C unless otherwise specified.
Table 4.
Symbol ICBO IEBO
Electrical charact...
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