Silicon Carbide Schottky Diode - Infineon
Description
SDP06S60 SDT06S60
Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • Ideal diode for Power Factor Correction up to 1200W 1) • No forward recovery
thinQ!¥ SiC Schottky Diode
Product Summary VRRM Qc IF
PG-TO220-2-2.
600 21 6
P-TO220
V nC A
Type SDP06S60 SDT06S60
Package P-TO220-3 PG-TO220-2-2.
Ordering Code Q67040-S4371
www.
DataSheet.
net/
Marking D06S60 D06S60
Pin 1 n.
c.
Pin 2 C
Pin 3 A
Q67040-S4446
C
A
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Symbol Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz
TC=25°C, tp=10ms
Value 6 8.
4 21.
5 28 60 2.
3 600 600 57.
6 -55.
.
.
+175
Unit A
IF IFRMS
Surge non repetitive forward current, sine halfwave IFSM Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.
1
IFRM IFMAX ³i2dt VRRM VRSM Ptot Tj , Tstg
Page 1
Non repetitive peak forward current
tp=10µs, TC=25°C
i 2t value, TC=25°C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating and storage temperature
Rev.
2.
4
A²s V W °C
2008-06-02
Datasheet pdf - http://www.
DataSheet4U.
co.
kr/
SDP06S60 SDT06S60
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded
RthJC RthJA
Symbol min.
-
Values typ.
max.
2.
6 62
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Diode forward voltage
IF=6A, Tj=25°C IF=6A, Tj=150°C
Symbol min.
VF IR
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DataSheet.
net/
Values typ.
max.
Unit
V 1.
5 1.
7 20 50 1.
7 2.
1 µA 200 1000
Reverse current
V R=600V, T j=25°C V R=600V, T j=150°C
1CCM, V = 85VAC, T = 150°C, T =100°C, η = 93%, ∆ I = 30% IN j C IN 2Device on 40mm*40mm*1.
5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical wit...
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