600V Stealth Diode
Description
ISL9R860PF2
April 2003
ISL9R860PF2
8A, 600V Stealth™ Diode
General Description
The ISL9R860PF2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications.
The Stealth™ family exhibits low reverse recovery current (IRRM) and exceptionally soft recovery under typical operating conditions.
This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications.
The low IRRM and short ta phase reduce loss in switching transistors.
The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry.
Consider using the Stealth™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.
Formerly developmental type TA49409.
Features
• Soft Recovery .
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tb / ta > 1.
2 • Fast Recovery.
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trr < 25ns • • • • Operating Temperature.
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150oC Reverse Voltage .
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600V Internally Isolated .
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1kV Avalanche Energy Rated
Applications
• Switch Mode Power Supplies • Hard Switched PFC Boost Diode • UPS Free Wheeling Diode • Motor Drive FWD • SMPS FWD • Snubber Diode
Package
TO-220F
www.
DataSheet.
co.
kr
Symbol
K
A CATHODE ANODE
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol VRRM VRWM VR IF(AV) IFRM IFSM PD EAVL TJ, TSTG TL Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC = 75oC) Repetitive Peak Surge Current (20kHz Square Wave) Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) Power Dissipation Avalanche Energy (1A, 40mH) Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.
063in (1.
6mm) from Case for 10s Ratings 600 600 600 8 16 100 ...
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