N-Channel Enhancement Mode Power MOSFET
Description
AP2763I-A
RoHS-compliant Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ Isolation Full Package ▼ Fast Switching Characteristics G S
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
750V 1.
45Ω 8.
0A
Description
AP2763 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.
TO-220CFM type provide high blocking voltage to overcome voltage surge G and sag in the toughest power system with the best combination of fast D S switching,ruggedized design and cost-effectiveness.
TO-220CFM(I)
Absolute Maximum Ratings
www.
DataSheet.
co.
kr
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current
1
Rating 750 ±30 8.
0 5.
0 30 50 0.
4
2
Units V V A A A W W/ ℃ mJ A ℃ ℃
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range
32 8.
0 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 2.
5 65 Units ℃/W ℃/W
Data & specifications subject to change without notice
1 200810233
Datasheet pdf - http://www.
DataSheet4U.
net/
AP2763I-A
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
o
Parameter Drain-Source Breakdown Voltage
3
Test Conditions VGS=0V, ID=1mA
Min.
750 2 -
Typ.
0.
9 7 47 8.
5 20 15 13 74 21 140 9 2.
6
Max.
Units 1.
45 4 10 ±100 75 3.
9 V V/℃ Ω V S uA nA nC nC nC ns ns ns ns pF pF pF Ω
Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg
Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Gate-Source Leakage Total Gate Charge
3...
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