Silicon N-Channel MOSFET
Description
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DataSheet.
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kr
WFP830B
Silicon N-Channel MOSFET
Features
� � � � � 5A,500V, RDS(on)(Max1.
6Ω)@VGS=10V Ultra-low Gate charge(Typical 18nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Channel Temperature (Note2) (Note1) (Note3) (Note1)
Parameter
Value
500 5 2.
9 20 ±30 300 7.
3 4.
5 73 0.
58 -55~150 300
Units
V A A A V mJ mJ V/ ns W W/℃ ℃ ℃
Thermal Characteristics
Symbol
RQJC RQCS RQJA
Parameter
Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient
Value Min
-
Typ
0.
5 -
Max
1.
71 62.
5
Units
℃/W ℃/W ℃/W
Rev.
A Feb.
2011
Copyright@Winsemi Microelectronics Co.
, Ltd.
, All right reserved.
Datasheet pdf - http://www.
DataSheet4U.
net/
www.
DataSheet.
co.
kr
WFP830B
Electrical Characteristics(Tc=25℃)
Characteristics
Gate leakage current Gate-source breakdown voltage
Symbol
IGSS V(BR)GSS
Test Condition
VGS=±30V,VDS=0V IG=±10 µA,VDS=0V VDS=500V,VGS=0V
Min
±30 -
Type
-
Max
±100 1 10
Unit
nA V µA µA V V/℃ V Ω S
Drain cut -off current
IDSS VDS=400V,TC=125℃
Drain -source breakdown voltage Breakdown voltage Temper...
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