Silicon N-Channel MOSFET
Description
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DataSheet4U.
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www.
DataSheet.
co.
kr
WFP3205
Silicon N-Channel MOSFET
Features
■ 110A,50V, RDS(on)(Max 8mΩ)@VGS=10V ■ Ultra-low Gate charge(Typical133nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced planar stripe,DMOS technology.
This latest technology has beenespecially designed to minimize on-state resistance ,have a lowgate charge with superior switching performance ,and ruggedavalanche characteristics.
This Power MOSFET is well suited for synchronous DC-DC Converters and power Management inportable and battery operated products.
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Channel Temperature (Note1) (Note3) (Note1)
Parameter
Value
50 110 80 390 ±20 20 5.
0 200 1.
3 -55~150 300
Units
V A A A V mJ V/ ns W W/℃ ℃ ℃
Thermal Characteristics
Symbol
RQJC RQCS RQJA
Parameter
Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient
Value Min
-
Typ
0.
5 -
Max
0.
75 62
Units
℃/W ℃/W ℃/W
Rev.
A Jun.
2011
Copyright@Winsemi Microelectronics Co.
, Ltd.
, All right reserved.
Datasheet pdf - http://www.
DataSheet4U.
net/
www.
DataSheet.
co.
kr
WFP3205
Electrical Characteristics(Tc=25℃)
Characteristics
Gate leakage current Gate-source breakdown voltage Drain cut -off current Drain -source breakdown voltage Breakdown voltage Temperature Coefficient Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge(gat...
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