P-Channel MOSFET
Description
AON2701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
General Description
The AON2701/L uses advanced trench technology to provide excellent R DS(ON) and low gate charge.
A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications.
AON2701 and AON2701L are electrically identical.
-RoHS Compliant -Halogen Free*
DFN 2x2 Package A NC D
Features
VDS (V) = -20V (VGS = -4.
5V) ID = -3A RDS(ON) < 120mΩ (VGS = -4.
5V) RDS(ON) < 160mΩ (VGS = -2.
5V) RDS(ON) < 200mΩ (VGS = -1.
8V) SCHOTTKY VKA (V) = 20V, IF = 2A, VF<0.
45V@1A
D
A
K
D G S K
Top
K G Bottom
S
Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage
www.
DataSheet.
co.
kr
MOSFET -20 ±8 -3 -2.
3 -15
Schottky
Units V V A
Gate-Source Voltage TA=25°C Continuous Drain Current Pulsed Drain Current
B A
VGS TA=70°C ID IDM VKA TA=25°C TA=70°C TA=25°C IF IFM TA=70°C PD TJ, TSTG Symbol RθJA
Schottky reverse voltage Continuous Forward CurrentA Pulsed Forward Current Power Dissipation Junction and Storage Temperature Range Parameter: Thermal Characteristics MOSFET t ≤ 10s Maximum Junction-to-AmbientA Maximum Junction-to-Ambient Thermal Characteristics Schottky Maximum Junction-to-AmbientA Maximum Junction-to-Ambient
A A B
20 2.
5 1.
5 15 1.
5 0.
95 -55 to 150 Typ 35 65 36 67 1.
45 0.
92 -55 to 150 Max 45 85 47 87
V A
W °C Units °C/W
Steady-State t ≤ 10s Steady-State
RθJA
°C/W
Alpha & Omega Semiconductor, Ltd.
www.
aosmd.
com
Datasheet pdf - http://www.
DataSheet4U.
net/
AON2701
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-20V, VGS=0V TJ=55°C VDS=0V, VGS=±8V VDS=VGS ID=-250µA VGS=-4.
5V, VDS=-5V VGS=-4.
5V, ID=-3A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=-2.
5V, ID=-2.
6A VGS=-1.
8V, ID=-1.
5A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-3A IS=-1A,VGS=0V -0.
3 -15 100 135 128 160 6 -0...
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