Silicon NPN Power Transistor
Description
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC5480
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for horizontal deflection output stage
applications.
ABSOLUT...
Inchange Semiconductor
2SC5480 PDF File
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