Silicon NPN Transistor
Description
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC3307
2SC3307
High-Speed and High-Voltage Switching Applications Switching Regulator Applications High-Speed DC-DC Converter Applications
Industrial Applications Unit: mm
• Excellent switching times: tr = 1.
0 μs (max), tf = 1.
0 μs (max) (IC = 5 A)
• High collector breakdown voltage: VCEO = 800 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
900 800
7 10 15 3
150
150 −55 to 150
V V V
A
A W °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-21F1A
Weight: 9.
75 g (typ.
)
Note1: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1
http://store.
iiic.
cc/
2009-07-17
Electrical Characteristics (Ta = 25°C)
2SC3307
Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage
Rise time
Switching time Storage time
Fall time
Symbol
Test Condition
Min
ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat)
VCB = 800 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IE = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 5 A IC = 5 A, IB = 1 A IC = 5 A, IB = 1 A...
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