Power MOSFET
Description
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DataSheet.
co.
kr
IRFD020, SiHFD020
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 24 7.
1 7.
1 Single
D
FEATURES
50 0.
10
• For Automatic Insertion • Compact, End Stackable • Fast Switching • Ease of Paralleling • Excellent Temperature Stability • Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
HVMDIP
DESCRIPTION
The HVMDIP technology is the key to Vishay’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of the HVMDIP design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness.
HVMDIPs feature all of the established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling, and temperature stability of the electrical parameters.
The HVMDIP 4 pin, dual-in-line package brings the advantages of HVMDIPs to high volume applications where automatic PC board insertion is desireable, such as circuit boards for computers, printers, telecommunications equipment, and consumer products.
Their compatibility with automatic insertion equipment, low-profile and end stackable features represent the stat-of-the-art in power device packaging.
S D
G G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free SnPb HVMDIP IRFD020PbF SiHFD020-E3 IRFD020 SiHFD020
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER Drain-Source Voltagea Gate-Source Voltage Continuous Drain Current Pulsed Drain Currentb Linear Derating Factor Inductive Current, Clamped Unclamped Inductive Current (Avalanche Current)c Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s Notes a.
TJ = 25 °C to 150 °C b.
Repetitive rating; pulse width limited by maximum junction temperature.
c.
VDD = 25 V, starting TJ = 25 °C, L = 100 μH, Rg = 25 d.
1.
6 mm from case.
L = 100 μH TC = 25 °C ILM IL PD TJ, T...
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