2SD2359
Description
www.
DataSheet.
co.
kr
Transistor
2SD2359
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
1.
5±0.
1 4.
5±0.
1 1.
6±0.
2
s Features
2.
6±0.
1
0.
4max.
q q
Low collector to emitter saturation voltage VCE(sat).
Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
45°
1.
0–0.
2
+0.
1
0.
4±0.
08 0.
5±0.
08 1.
5±0.
1 3.
0±0.
15
4.
0–0.
20
0.
4±0.
04
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
3
2
1
(Ta=25˚C)
Ratings 20 20 5 1.
2 1 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C
1:Base 2:Collector 3:Emitter
marking
Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg
EIAJ:SC–62 Mini Power Type Package
Marking symbol : 1O
Printed circuit board: Copper foil area of thickness of 1.
7mm for the collector portion
or more, and the board
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25˚C)
Symbol ICBO VCBO VCEO VEBO hFE VCE(sat) fT Cob Conditions VCB = 14V, IE = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 100mA IC = 500mA, IB = 10mA VCB = 6V, IE = –50mA, f = 200MHz VCB = 6V, IE = 0, f = 1MHz 20 20 5 200 0.
11 100 23 800 0.
2 V MHz pF min typ max 1 Unit µA V V V
2.
5±0.
1
+0.
25
1
Datasheet pdf - http://www.
DataSheet4U.
net/
www.
DataSheet.
co.
kr
Transistor
PC — Ta
1.
4
2SD2359
IC — VCE
1.
2 Ta=25˚C 1.
0 1.
0 25˚C Ta=75˚C 0.
8 –25˚C 1.
2 VCE=2V
IC — VBE
Collector power dissipation PC (W)
1.
2
Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.
7mm for the collector portion.
Collector current IC (A)
1.
0
0.
8
3.
5mA 3.
0mA
0.
8
0.
6
2.
5mA 2.
...
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