2SC5249
Description
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2SC5249
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5249 600 600 7 3(Pulse6) 1.
5 35(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Switching Regulator and General Purpose
(Ta=25°C) 2SC5249 100max 100max 600min 20 to 40 0.
5max 1.
2max 6typ 50typ V V MHz pF
13.
0min
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=600V VEB=7V IC=10mA VCE=4V, IC=1A IC=1A, IB=0.
2A IC=1A, IB=0.
2A VCE=12V, IE=–0.
3A VCB=10V, f=1MHz
External Dimensions FM20(TO220F)
4.
0±0.
2 10.
1±0.
2 4.
2±0.
2 2.
8 c0.
5
Unit
µA
V
16.
9±0.
3 8.
4±0.
2
µA
1.
35±0.
15 1.
35±0.
15 0.
85 +0.
2 -0.
1 0.
45 +0.
2 -0.
1 2.
54 2.
2±0.
2 2.
4±0.
2
sTypical Switching Characteristics (Common Emitter)
VCC (V) 200 RL (Ω) 200 IC (A) 1 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.
1 IB2 (A) –0.
1 ton (µs) 1.
0max tstg (µs) 19max tf (µs) 1.
0max
2.
54
3.
9 B C E
I C – V CE Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V ) 3
300mA
VCE(sat)–IC Characteristics (Typical)
0.
5 I C / I B =5 Const.
I C – V BE Temperature Characteristics (Typical)
3 (V C E =4V)
200 mA
Collector Current I C (A)
Collector Current I C (A)
2
100m A
2
p)
mp) e Te 25˚C (Cas
se
1
I B =20mA
25˚C (Case Temp) –55˚C (Case Temp)
1
˚C
0
0
1
2
3
4
0 0.
01
0.
05
0.
1
0.
5
1
3
0
0
0.
5 Base-Emittor Voltage V B E (V)
–55˚C
125
(Case
(Ca
Temp
50mA
Tem
)
125˚C (Case Temp)
±0.
2
0.
8±0.
2
a b
ø3.
3±0.
2
Weight : Approx 2.
0g a.
Type No.
b.
Lot No.
1.
0
Collector-Emitter Voltage V C E (V)
Collector Current I C (A)
h FE – I C Characteristics (Typical)
(V C E =4V) 200 125˚C DC Cur rent Gain h FE 100 25˚C 50 –55˚C 30
t on •t stg • t f – I C Characteristics (Typical)
θ j- a (˚ C/W)
3
θ j-a – t Characteristics
t o n • t s tg • t f ( µ s)
t s tg 10 V C C 200V 5 I C :I B 1 :–I B2 =10:1:1 t on 1 0.
5 0.
2 0.
1 tf
Transient Thermal Resistance
Sw...
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