INSULATED GATE BIPOLAR TRANSISTOR
Description
www.DataSheet.co.kr
PD - 94913
IRGIB10B60KD1PbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. Maximum Junction T...
Similar Datasheet