Power Transistor
Description
2SB1568
Transistors
Power Transistor (−80V, −4A)
2SB1568
z Features 1) Available in TO-220 FN package 2) Darling connection provides high dc current gain (hFE) 3) Damper diode is incorporated 4) Built in resistors between base and emitter 5) Two millimeters lower than TO-220 FP which allows higher density mounting 6) Complementary pair with 2SD2399 zExternal dimensions (Unit : mm)
10.
0 φ3.
2
4.
5 2.
8
5.
0
1.
2
1.
3
0.
8
ROHM : TO-220FN
zApplications Power amplifler
zAbsolute maximum rating (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage
Collector current
Symbol VCBO VCEO VEBO IC ICP PC
Collector dissipation
Junction temperature Storage temperature
zElectrical characteristics (unless otherwise noted, Ta=25°C)
Parameter Collector−base breakdown voltage Collector−emitter breakdown voltage Collector cutoff current
w
w w
t a .
D
Tj Tstg
Limits −80 −80 −7 −4 −6 2 30 150 −55 to +150
e h S a
Unit V V V A(DC) A(Pulse) ∗ W(Ta=25°C) W(Tc=25°C) °C °C
U 4 t e
2.
54 2.
54
0.
75
(1) (2) (3)
2.
6
m o .
c
(1) Base (Gate) (2) Collector (Drain) (3) Emitter (Sourse)
C
15.
0
12.
0
14.
0
8.
0
zEquivalent circuit
B
R1
R2
E
R1 = 3kΩ R2 = 300Ω
: :
B : Base C : Collector E : Emitter
Symbol BVCBO BVCEO BVEBO
Min.
−80 −80 −7 − − 1000 − − −
Typ.
− − − − − 5000 −1.
0 12 35
Max.
− − − −100 −3 −3 10000 −1.
5 −
Unit V V V µA mV − V MHz
pF
Conditions IC = −50µA IC = −1mA IE = −5mA VCB = −80V VEB = −5V VCE= −3V, IC = −2A IC/IB= −2A/ −4mA VCE= −5V, IE = 0.
5A, f=10MHz VCB= −10V, IE = 0A, f=1MHz
ICBO Emitter cutoff current IEBO DC current gain ∗1 Collector−emitter hFE breakdown voltage ∗1 Collector−emitter VCE(sat) saturation voltage fT ∗1 ∗2 Transition frequency Output capacitance Cob ∗1 Measured using pulse current.
∗2 Transition frequency of the device.
w
w
w
.
D
t aRev.
A
h S a
t e e
4U
.
m o c
1/3
2SB1568
Transistors
zPackaging specifications
Packaging Type hFE 2SB1568 Code Basic ordering unit(pieces) 500 Bulk
1000 to 10000
z...
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