2-megabit (256K x 8) 3-volt Only Flash Memory
Description
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Features
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Single Voltage, Range 3V to 3.
6V Supply 3-volt Only Read and Write Operation Software Protected Programming Fast Read Access Time – 100 ns Low Power Dissipation – 15 mA Active Current – 50 µA CMOS Standby Current Sector Program Operation – Single Cycle Reprogram (Erase and Program) – 1024 Sectors (256 Bytes/Sector) – Internal Address and Data Latches for 256 Bytes Two 8K Bytes Boot Blocks with Lockout Fast Sector Program Cycle Time – 20 ms Internal Program Control and Timer DATA Polling for End of Program Detection Typical Endurance > 10,000 Cycles CMOS and TTL Compatible Inputs and Outputs Green (Pb/Halide-free) Packaging Option
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2-megabit (256K x 8) 3-volt Only Flash Memory AT29LV020
1.
Description
The AT29LV020 is a 3-volt-only in-system Flash programmable and erasable read only memory (PEROM).
Its 2 megabits of memory is organized as 262,144 bytes by 8 bits.
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 100 ns with power dissipation of just 54 mW over the industrial temperature range.
When the device is deselected, the CMOS standby current is less than 50 µA.
The device endurance is such that any sector can typically be written to in excess of 10,000 times.
To allow for simple in-system reprogrammability, the AT29LV020 does not require high input voltages for programming.
Five-volt-only commands determine the operation of the device.
Reading data out of the device is similar to reading from an EPROM.
Reprogramming the AT29LV020 is performed on a sector basis; 256 bytes of data are loaded into the device and then simultaneously programmed.
During a reprogram cycle, the address locations and 256 bytes of data are captured at microprocessor speed and internally latched, freeing the address and data bus for other operations.
Following the initiation of a program cycle, the device will automatically erase the sector and then program the latched data using an...
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